Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys
Identifieur interne : 011D50 ( Main/Repository ); précédent : 011D49; suivant : 011D51Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys
Auteurs : RBID : Pascal:00-0336877Descripteurs français
- Pascal (Inist)
- 8560G, 8105E, 7361E, 7866F, 4279P, 8115G, 8115K, Etude expérimentale, Photodétecteur, Rayonnement UV, Indium nitrure, Aluminium nitrure, Gallium nitrure, Fabrication, Dépôt chimique phase vapeur, Réponse spectrale, Indium composé, Aluminium composé, Gallium composé, Semiconducteur III-V, Détecteur UV, Méthode MOCVD, Croissance semiconducteur, Dispositif photoconducteur, Couche mince semiconductrice.
English descriptors
- KwdEn :
- Aluminium compounds, Aluminium nitrides, CVD, Experimental study, Fabrication, Gallium compounds, Gallium nitrides, III-V semiconductors, Indium compounds, Indium nitrides, MOCVD, Photoconducting devices, Photodetectors, Semiconductor growth, Semiconductor thin films, Spectral response, Ultraviolet detectors, Ultraviolet radiation.
Abstract
We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on InxAlyGa1-x-yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm InxAlyGa1-x-yN alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the InxAlyGa1-x-yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the InxAlyGa1-x-yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of InxAlyGa1-x-yN quaternary over AlGaN ternary alloys for UV detector applications are also discussed. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoresponsivity of ultraviolet detectors based on In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys</title><author><name sortKey="Oder, T N" uniqKey="Oder T">T. N. Oder</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Li, J" uniqKey="Li J">J. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0336877</idno><date when="2000-08-07">2000-08-07</date><idno type="stanalyst">PASCAL 00-0336877 AIP</idno><idno type="RBID">Pascal:00-0336877</idno><idno type="wicri:Area/Main/Corpus">012A95</idno><idno type="wicri:Area/Main/Repository">011D50</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Aluminium nitrides</term><term>CVD</term><term>Experimental study</term><term>Fabrication</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>MOCVD</term><term>Photoconducting devices</term><term>Photodetectors</term><term>Semiconductor growth</term><term>Semiconductor thin films</term><term>Spectral response</term><term>Ultraviolet detectors</term><term>Ultraviolet radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>8105E</term><term>7361E</term><term>7866F</term><term>4279P</term><term>8115G</term><term>8115K</term><term>Etude expérimentale</term><term>Photodétecteur</term><term>Rayonnement UV</term><term>Indium nitrure</term><term>Aluminium nitrure</term><term>Gallium nitrure</term><term>Fabrication</term><term>Dépôt chimique phase vapeur</term><term>Réponse spectrale</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Détecteur UV</term><term>Méthode MOCVD</term><term>Croissance semiconducteur</term><term>Dispositif photoconducteur</term><term>Couche mince semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary over AlGaN ternary alloys for UV detector applications are also discussed. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoresponsivity of ultraviolet detectors based on In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys</s1></fA08><fA11 i1="01" i2="1"><s1>ODER (T. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>LI (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>791-793</s1></fA20><fA21><s1>2000-08-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0336877</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. 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